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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1013-O,T6MIBF(J. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 60 @ 200ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The maximum collector emitter breakdown voltage of the product is 160 v. The transistor is a pnp type. The 1.5v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92l is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sa1013, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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