Category:
Power Transistor
Maximum Base Source Voltage:
±20V
Minimum DC Current Gain:
5.5
Transistor Type:
NPN
Dimensions:
15.7 x 5.7 x 26.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
26.7mm
Maximum Collector Source Voltage:
0.304V
Width:
5.7mm
Length:
15.7mm
Package Type:
TO-3PF
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
12 A
Maximum Base Current:
3.33A
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Current - Collector (Ic) (Max):
12 A
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
800 V
Operating Temperature:
-55°C ~ 125°C (TJ)
Package / Case:
TO-3P-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
8.5 @ 11A, 5V
Frequency - Transition:
15MHz
title:
FJAFS1720TU
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
250mV @ 3.33A, 10A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
ESBC™
Supplier Device Package:
TO-3PF
Packaging:
Bulk
Power - Max:
60 W
Base Product Number:
FJAFS172
ECCN:
EAR99
