Toshiba Semiconductor and Storage TTA004B,Q

TTA004B-Q Toshiba Semiconductor and Storage TTA004B,Q
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8541.29.0075
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 100mA, 5V
edacadModel:
TTA004B,Q Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
160 V
edacadModelUrl:
/en/models/6600426
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126N
Power - Max:
10 W
Base Product Number:
TTA004
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TTA004B,Q. The maximum collector current includes 1.5 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 140 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 500mv @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 160 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-126n is the supplier device package value. The maximum power of the product is 10 w. Moreover, it corresponds to tta004, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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