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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC5200N(S1,E,S). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 230 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. In addition, it is reach unaffected. The transistor is a npn type. The 3v @ 800ma, 8a is the maximum Vce saturation. Its typical moisture sensitivity level is not applicable. It has a long 12 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(n) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 150 w. Moreover, it corresponds to 2sc5200, a base product number of the product. The product is designated with the ear99 code number.
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