Minimum DC Current Gain:
30
Transistor Type:
PNP
Dimensions:
10.8 x 7.8 x 2.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20.8 W
Maximum Collector Base Voltage:
300 V
Maximum Collector Emitter Voltage:
-300 V
Maximum Emitter Base Voltage:
3 V
Package Type:
SOT-32
Number of Elements per Chip:
1
Maximum DC Collector Current:
-500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
300 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
MJE350 Models
edacadModelUrl:
/en/models/603655
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
SOT-32-3
Packaging:
Tube
Power - Max:
20.8 W
Base Product Number:
MJE350
ECCN:
EAR99
