Diameter:
5.3mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
100ns
Peak Non-Repetitive Forward Surge Current:
70A
Maximum Forward Voltage Drop:
1.85V
Maximum Continuous Forward Current:
4A
Rectifier Type:
General Purpose
Package Type:
DO-201AD
Number of Elements per Chip:
1
Diode Type:
Rectifier
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
1000V
Reverse Recovery Time (trr):
100 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
DO-201AA, DO-27, Axial
Operating Temperature - Junction:
-65°C ~ 175°C
title:
MUR4100EG
REACH Status:
REACH Unaffected
edacadModel:
MUR4100EG Models
edacadModelUrl:
/en/models/1482824
Current - Average Rectified (Io):
4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.85 V @ 4 A
Voltage - DC Reverse (Vr) (Max):
1000 V
Capacitance @ Vr, F:
-
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
11 Weeks
Current - Reverse Leakage @ Vr:
25 µA @ 1000 V
Mounting Type:
Through Hole
Series:
SWITCHMODE™
Supplier Device Package:
Axial
Packaging:
Bulk
Technology:
Standard
Base Product Number:
MUR4100
ECCN:
EAR99