onsemi 1200V 18A, Silicon Junction Diode, 3-Pin D2PAK ISL9R18120S3ST

ISL9R18120S3ST onsemi 1200V 18A, Silicon Junction Diode, 3-Pin D2PAK
ISL9R18120S3ST
ISL9R18120S3ST
onsemi

Product Information

Mounting Type:
Surface Mount
Diode Technology:
Silicon Junction
Maximum Continuous Forward Current:
18A
Peak Reverse Recovery Time:
400ns
Peak Non-Repetitive Forward Surge Current:
200A
Maximum Forward Voltage Drop:
3.3V
Rectifier Type:
General Purpose
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Diode Type:
Rectifier
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
1200V
Reverse Recovery Time (trr):
300 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
edacadModel:
ISL9R18120S3ST Models
Operating Temperature - Junction:
-55°C ~ 175°C
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1057335
Current - Average Rectified (Io):
18A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
3.3 V @ 18 A
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
1200 V
Capacitance @ Vr, F:
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
100 µA @ 1200 V
Mounting Type:
Surface Mount
Series:
Stealth™
Supplier Device Package:
TO-263 (D2PAK)
Technology:
Avalanche
Base Product Number:
ISL9R18120
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is 1200V 18A Silicon Junction Diode 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is ISL9R18120S3ST. The product is available in surface mount configuration. The product utilizes silicon junction diode technology. Furthermore, its maximum continuous forward current constitutes 18a. Moreover, it has a peak reverse recovery time about 400ns . Moreover, a bespoke product has 200a peak non-repetitive forward surge current. It features 3.3v of maximum forward voltage drop. This general purpose product is highly suited for various professionals in various settings. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It is designed with a rectifier diode. The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 1200v. It has a trr (reverse recovery time) of 300 ns. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The product operate at temperatures ranging from -55°c ~ 175°c. In addition, it is reach unaffected. It features a 18a of average rectified current. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 3.3 v @ 18 a. It is shipped in tape & reel (tr) package . While it has maximum reverse voltage of 1200 v. Its typical moisture sensitivity level is 1 (unlimited). 100 µa @ 1200 v is the reverse leakage value of a bespoke product. The product stealth™, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. This product use avalanche technology. Moreover, it corresponds to isl9r18120, a base product number of the product. The product is designated with the ear99 code number.

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ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S, 18A, 1200V, STEALTH Diode Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab Change 27/Dec/2022(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 30/Sep/2022(PCN Obsolescence/ EOL)
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ISL9R18120G2/P2/S3S(Datasheets)
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Mult Dev Box Chgs 1/Jul/2021(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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