onsemi 200V 16A, Dual Silicon Junction Diode, 3-Pin TO-220AB BYW51-200G

BYW51-200G onsemi 200V 16A, Dual Silicon Junction Diode, 3-Pin TO-220AB
BYW51-200G
onsemi

Product Information

Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
35ns
Peak Non-Repetitive Forward Surge Current:
100A
Maximum Forward Voltage Drop:
970mV
Maximum Continuous Forward Current:
16A
Rectifier Type:
General Purpose
Package Type:
TO-220AB
Number of Elements per Chip:
2
Diode Type:
Ultrafast Rectifiers
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
200V
Reverse Recovery Time (trr):
35 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-220-3
Diode Configuration:
1 Pair Common Cathode
edacadModel:
BYW51-200G Models
Operating Temperature - Junction:
-65°C ~ 175°C
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1476301
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
970 mV @ 8 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
200 V
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Average Rectified (Io) (per Diode):
8A
standardLeadTime:
12 Weeks
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Mounting Type:
Through Hole
Series:
SWITCHMODE™
Supplier Device Package:
TO-220
Technology:
Standard
Base Product Number:
BYW51
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is 200V 16A Dual Silicon Junction Diode 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is BYW51-200G. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 35ns . Moreover, a bespoke product has 100a peak non-repetitive forward surge current. It features 970mv of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 16a. This general purpose product is highly suited for various professionals in various settings. The package is a sort of to-220ab. It consists of 2 elements per chip. It is designed with a ultrafast rectifiers diode. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 200v. It has a trr (reverse recovery time) of 35 ns. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-220-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -65°c ~ 175°c. In addition, it is reach unaffected. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 970 mv @ 8 a. It is shipped in tube package . While it has maximum reverse voltage of 200 v. Its typical moisture sensitivity level is not applicable. The average rectified current at per diode is 8a. It has a long 12 weeks standard lead time. 10 µa @ 200 v is the reverse leakage value of a bespoke product. The product switchmode™, is a highly preferred choice for users. to-220 is the supplier device package value. This product use standard technology. Moreover, it corresponds to byw51, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev 14/May/2020(PCN Assembly/Origin)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)
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BYW51-200(Datasheets)

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FAQs

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You will get a confirmation email regarding your order of onsemi 200V 16A, Dual Silicon Junction Diode, 3-Pin TO-220AB BYW51-200G. You can also check on our website or by contacting our customer support team for further order details on onsemi 200V 16A, Dual Silicon Junction Diode, 3-Pin TO-220AB BYW51-200G.
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Yes. We ship BYW51-200G Internationally to many countries around the world.