WeEn Semiconductors Co., Ltd 600V 10A, Silicon Junction Diode, 2-Pin TO-220F BYC10DX-600

BYC10DX-600-127 WeEn Semiconductors Co., Ltd 600V 10A, Silicon Junction Diode, 2-Pin TO-220F BYC10DX-600
WeEn Semiconductors Co., Ltd

Product Information

Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
30ns
Peak Non-Repetitive Forward Surge Current:
71A
Maximum Forward Voltage Drop:
2.5V
Maximum Continuous Forward Current:
10A
Rectifier Type:
General Purpose
Package Type:
TO-220F
Number of Elements per Chip:
1
Diode Type:
Hyperfast
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
600V
RoHs Compliant
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This is 600V 10A Silicon Junction Diode 2-Pin TO-220F BYC10DX-600 manufactured by WeEn Semiconductors Co., Ltd. The manufacturer part number is BYC10DX-600,127. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 30ns . Moreover, a bespoke product has 71a peak non-repetitive forward surge current. It features 2.5v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 10a. This general purpose product is highly suited for various professionals in various settings. The package is a sort of to-220f. It consists of 1 elements per chip. It is designed with a hyperfast diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 600v.

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BYC10DX-600, Hyperfast Power Diode Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of WeEn Semiconductors Co., Ltd 600V 10A, Silicon Junction Diode, 2-Pin TO-220F BYC10DX-600. You can also check on our website or by contacting our customer support team for further order details on WeEn Semiconductors Co., Ltd 600V 10A, Silicon Junction Diode, 2-Pin TO-220F BYC10DX-600.
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