WeEn Semiconductors Co., Ltd 200V 10A, Dual Silicon Junction Diode, 3-Pin TO-220AB BYQ28E-200

BYQ28E-200-127 WeEn Semiconductors Co., Ltd 200V 10A, Dual Silicon Junction Diode, 3-Pin TO-220AB BYQ28E-200
BYQ28E-200,127
WeEn Semiconductors Co., Ltd

Product Information

Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
25ns
Peak Non-Repetitive Forward Surge Current:
55A
Maximum Forward Voltage Drop:
1.25V
Maximum Continuous Forward Current:
10A
Rectifier Type:
General Purpose
Package Type:
TO-220AB
Number of Elements per Chip:
2
Diode Type:
Ultrafast Rectifiers
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
200V
RoHs Compliant
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This is 200V 10A Dual Silicon Junction Diode 3-Pin TO-220AB BYQ28E-200 manufactured by WeEn Semiconductors Co., Ltd. The manufacturer part number is BYQ28E-200,127. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 25ns . Moreover, a bespoke product has 55a peak non-repetitive forward surge current. It features 1.25v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 10a. This general purpose product is highly suited for various professionals in various settings. The package is a sort of to-220ab. It consists of 2 elements per chip. It is designed with a ultrafast rectifiers diode. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 200v.

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BYQ28E Series Rectifier diodes ultrafast, rugged Data Sheet(Technical Reference)

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