Taiwan Semi FR103G R0 Fast Recovery Diode, 200V 1A, 2-Pin DO-41

FR103G-R0 Taiwan Semi FR103G R0 Fast Recovery Diode, 200V 1A, 2-Pin DO-41
Taiwan Semiconductor

Product Information

Diameter:
2.7mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
150ns
Peak Non-Repetitive Forward Surge Current:
30A
Maximum Forward Voltage Drop:
1.3V
Maximum Continuous Forward Current:
1A
Rectifier Type:
Fast Recovery
Package Type:
DO-41
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
200V
RoHs Compliant
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This is Taiwan Semi Fast Recovery Diode 200V 1A 2-Pin DO-41 manufactured by Taiwan Semiconductor. The manufacturer part number is FR103G R0. Its diameter is 2.7mm. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 150ns . Moreover, a bespoke product has 30a peak non-repetitive forward surge current. It features 1.3v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 1a. This fast recovery product is highly suited for various professionals in various settings. The package is a sort of do-41. It consists of 1 elements per chip. It is designed with a silicon junction diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 200v.

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ESD Control Selection Guide V1(Technical Reference)
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FR101G - FR107G, 1A Glass Passivated Fast Recovery Rectifiers Data Sheet(Technical Reference)

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