Vishay VS-1EFH02-M3/I SMT Diode, 200V 1A, 2-Pin DO-219AB

VS-1EFH02-M3-I Vishay VS-1EFH02-M3/I SMT Diode, 200V 1A, 2-Pin DO-219AB
Vishay

Product Information

Mounting Type:
Surface Mount
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
23ns
Peak Non-Repetitive Forward Surge Current:
35A
Maximum Forward Voltage Drop:
930mV
Maximum Continuous Forward Current:
1A
Rectifier Type:
General Purpose
Package Type:
DO-219AB
Number of Elements per Chip:
1
Diode Type:
Fast Recovery Epitaxial Diode
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
200V
RoHs Compliant
Checking for live stock

This is SMT Diode 200V 1A 2-Pin DO-219AB manufactured by Vishay. The manufacturer part number is VS-1EFH02-M3/I. The product is available in surface mount configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 23ns . Moreover, a bespoke product has 35a peak non-repetitive forward surge current. It features 930mv of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 1a. This general purpose product is highly suited for various professionals in various settings. The package is a sort of do-219ab. It consists of 1 elements per chip. It is designed with a fast recovery epitaxial diode diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 200v.

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VS-1EFH02-M3, Hyperfast Rectifier, 1A FRED Pt(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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