Toshiba TRS6E65C,S1AQ(S SiC Schottky Diode, 650V 6A, 2-Pin TO-220

TRS6E65C-S1AQ-S Toshiba TRS6E65C,S1AQ(S SiC Schottky Diode, 650V 6A, 2-Pin TO-220
TRS6E65C,S1AQ(S
Toshiba

Product Information

Mounting Type:
Through Hole
Maximum Continuous Forward Current:
6A
Peak Non-Repetitive Forward Surge Current:
30A
Maximum Forward Voltage Drop:
1.7V
Diode Technology:
SiC Schottky
Package Type:
TO-220
Number of Elements per Chip:
1
Diode Type:
Schottky
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
650V
RoHs Compliant
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This is SiC Schottky Diode 650V 6A 2-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TRS6E65C,S1AQ(S. The product is available in through hole configuration. Furthermore, its maximum continuous forward current constitutes 6a. Moreover, a bespoke product has 30a peak non-repetitive forward surge current. It features 1.7v of maximum forward voltage drop. The product utilizes sic schottky diode technology. The package is a sort of to-220. It consists of 1 elements per chip. It is designed with a schottky diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 650v.

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TRS6E65C, SiC Schottky Barrier Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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