ON Semi 1N914_T50A Diode, 100V 200mA, 2-Pin DO-35

1N914_T50A ON Semi  Diode, 100V 200mA, 2-Pin DO-35
ON Semiconductor

Product Information

Diameter:
1.91mm
Dimensions:
1.91 (Dia.) x 4.56mm
Mounting Type:
Through Hole
Peak Reverse Recovery Time:
4ns
Maximum Continuous Forward Current:
200mA
Maximum Operating Temperature:
+175 °C
Peak Non-Repetitive Forward Surge Current:
4A
Maximum Forward Voltage Drop:
1V
Height:
4.56mm
Peak Reverse Current:
100µA
Diode Technology:
Silicon Junction
Package Type:
DO-35
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
100V
RoHs Compliant
Checking for live stock

This is ON Semi Diode 100V 200mA 2-Pin DO-35 manufactured by ON Semiconductor. The manufacturer part number is 1N914_T50A. Its diameter is 1.91mm. The given dimensions of the product include 1.91 (dia.) x 4.56mm. The product is available in through hole configuration. Moreover, it has a peak reverse recovery time about 4ns . Furthermore, its maximum continuous forward current constitutes 200ma. It has a maximum operating temperature of +175 °c. Moreover, a bespoke product has 4a peak non-repetitive forward surge current. It features 1v of maximum forward voltage drop. In addition, the height is 4.56mm. It has a typical 100µa peak reverse current . The product utilizes silicon junction diode technology. The package is a sort of do-35. It consists of 1 elements per chip. It is designed with a silicon junction diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 100v.

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ESD Control Selection Guide V1(Technical Reference)

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