HN2S03T(TE85L) Toshiba Dual SMT Schottky Diode, Isolated, 25V 100mA, 4-Pin TESQ

HN2S03T-TE85L- HN2S03T(TE85L) Toshiba Dual SMT Schottky Diode, Isolated, 25V 100mA, 4-Pin TESQ
Toshiba

Product Information

Dimensions:
0.52 x 1.2 x 0.9mm
Mounting Type:
Surface Mount
Diode Technology:
Schottky
Maximum Continuous Forward Current:
100mA
Maximum Operating Temperature:
+100 °C
Peak Non-Repetitive Forward Surge Current:
1A
Height:
0.52mm
Peak Reverse Current:
500nA
Width:
0.9mm
Length:
1.2mm
Package Type:
TESQ
Number of Elements per Chip:
2
Minimum Operating Temperature:
-40 °C
Diode Type:
Schottky
Diode Configuration:
Isolated
Pin Count:
4
Peak Reverse Repetitive Voltage:
25V
RoHs Compliant
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This is Dual SMT Schottky Diode Isolated 25V 100mA 4-Pin TESQ manufactured by Toshiba. The manufacturer part number is HN2S03T(TE85L). The given dimensions of the product include 0.52 x 1.2 x 0.9mm. The product is available in surface mount configuration. The product utilizes schottky diode technology. Furthermore, its maximum continuous forward current constitutes 100ma. It has a maximum operating temperature of +100 °c. Moreover, a bespoke product has 1a peak non-repetitive forward surge current. In addition, the height is 0.52mm. It has a typical 500na peak reverse current . Furthermore, the product is 0.9mm wide. Its accurate length is 1.2mm. The package is a sort of tesq. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. It is designed with a schottky diode. The diode features a isolated configuration. It contains 4 pins. While having the peak reverse repetitive 25v.

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Schottky Barrier Diode Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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