Vishay FESB8JT-E3/81 SMT Diode, 600V 8A, 3-Pin D2PAK

FESB8JT-E3-81 Vishay FESB8JT-E3/81 SMT Diode, 600V 8A, 3-Pin D2PAK
FESB8JT-E3/81
Vishay

Product Information

Mounting Type:
Surface Mount
Peak Reverse Recovery Time:
50ns
Peak Non-Repetitive Forward Surge Current:
125A
Maximum Forward Voltage Drop:
1.5V
Maximum Continuous Forward Current:
8A
Diode Technology:
Silicon Junction
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
600V
RoHs Compliant
Checking for live stock

This is SMT Diode 600V 8A 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is FESB8JT-E3/81. The product is available in surface mount configuration. Moreover, it has a peak reverse recovery time about 50ns . Moreover, a bespoke product has 125a peak non-repetitive forward surge current. It features 1.5v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 8a. The product utilizes silicon junction diode technology. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It is designed with a silicon junction diode. The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 600v.

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ESD Control Selection Guide V1(Technical Reference)

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