Infineon IDW30G65C5 SiC Schottky Diode, 650V 30A, 3-Pin TO-247

IDW30G65C5 Infineon  SiC Schottky Diode, 650V 30A, 3-Pin TO-247
IDW30G65C5
IDW30G65C5
ET13817288
ET13817288
Rectifier Diodes & Schottky Diodes
Rectifier Diodes & Schottky Diodes
Infineon

Product Information

Dimensions:
16.13 x 5.21 x 21.1mm
Mounting Type:
Through Hole
Diode Technology:
SiC Schottky
Maximum Continuous Forward Current:
30A
Maximum Operating Temperature:
+175 °C
Peak Non-Repetitive Forward Surge Current:
165A
Maximum Forward Voltage Drop:
2.1V
Height:
21.1mm
Peak Reverse Current:
1.5mA
Width:
5.21mm
Length:
16.13mm
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Diode Type:
SiC Schottky
Power Dissipation:
150W
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
650V
RoHs Compliant
Checking for live stock

This is SiC Schottky Diode 650V 30A 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IDW30G65C5. The given dimensions of the product include 16.13 x 5.21 x 21.1mm. The product is available in through hole configuration. The product utilizes sic schottky diode technology. Furthermore, its maximum continuous forward current constitutes 30a. It has a maximum operating temperature of +175 °c. Moreover, a bespoke product has 165a peak non-repetitive forward surge current. It features 2.1v of maximum forward voltage drop. In addition, the height is 21.1mm. It has a typical 1.5ma peak reverse current . Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. The package is a sort of to-247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It is designed with a sic schottky diode. It has about 150w power dissipation . The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 650v.

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IDW30G65C5 SiC Schottky Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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