Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
5 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
4 W
Series:
OMNIFET
Maximum Drain Source Resistance:
500 mΩ
Maximum Gate Threshold Voltage:
2.5V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
0.5V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Forward Diode Voltage:
0.8V
Channel Type:
N
Pin Count:
8
Transistor Configuration:
Isolated
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Supplier Device Package:
8-SOIC
Ratio - Input:Output:
1:1
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Output (Max):
1.7A
Input Type:
Non-Inverting
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply (Vcc/Vdd):
Not Required
REACH Status:
REACH Unaffected
Output Type:
N-Channel
edacadModel:
VNS1NV04DP-E Models
edacadModelUrl:
/en/models/2346454
Package:
Tube
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Interface:
On/Off
Features:
-
Mounting Type:
Surface Mount
Series:
OMNIFET II™, VIPower™
Voltage - Load:
36V (Max)
Fault Protection:
Current Limiting (Fixed), Over Temperature, Over Voltage
Base Product Number:
VNS1NV04
Rds On (Typ):
250mOhm (Max)
Output Configuration:
Low Side
ECCN:
EAR99
Number of Outputs:
2
Switch Type:
General Purpose
