Osram Opto BPW 34 F IR Si Photodiode, 60 °, Through Hole DIP

BPW-34-F Osram Opto BPW 34 F IR Si Photodiode, 60 °, Through Hole DIP
BPW 34 F
OSRAM Opto Semiconductors

Product Information

Polarity:
Reverse
Peak Photo Sensitivity:
0.7A/W
Mounting Type:
Through Hole
Wavelength of Peak Sensitivity:
950nm
Diode Material:
Si
Maximum Wavelength Detected:
1100nm
Height:
2.2mm
Minimum Wavelength Detected:
780nm
Width:
4mm
Length:
4.5mm
Package Type:
DIP
Number of Pins:
2
Angle of Half Sensitivity:
60 °
Spectrums Detected:
Infrared
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This is Osram Opto IR Si Photodiode 60 ° Through Hole DIP manufactured by OSRAM Opto Semiconductors. The manufacturer part number is BPW 34 F. While providing reverse polarity. Its peak photo sensitivity is approximately 0.7a/w . The product is available in through hole configuration. Furthermore, its wavelength of peak sensitivity is 950nm . Its diode is made of si material . In addition, it has a maximum 1100nm detected wavelength . In addition, the height is 2.2mm. Moreover, it has a minimum 780nm detected wavelength . Furthermore, the product is 4mm wide. Its accurate length is 4.5mm. The package is a sort of dip. It is comprised of 2 pins. It has 60 ° angle of half sensitivity . Moreover, it detects infrared spectrums .

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Datasheet(Technical Reference)

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