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This is manufactured by ON Semiconductor. The manufacturer part number is QRD1113. It has an emitter collector voltage of 5v . The output signal is a kind of phototransistor. The given dimensions of the product include 4.39 x 6.1 x 4.65mm. The product is available in through hole configuration. Additionally, it has about 0.3 (minimum)ma collector current . Moreover, it has a saturation voltage of 0.4v . It has a typical 10µs rise time . Moreover, it has a standard 30v collector emitter voltage . In addition, it has a maximum 940nm detected wavelength . In addition, the height is 4.65mm. Furthermore, the product is 6.1mm wide. Its accurate length is 4.39mm. The package is a sort of custom 4l. It is supplied with 1 channels. The product has maximum 100na dark current . It is comprised of 4 pins. It has about 940 nm spectral range of sensitivity . Moreover, it detects infrared spectrums . It has a typical 50µs fall time . It has typical 8 weeks of manufacturer standard lead time. Base Part Number: qrd111. It features reflective optical sensor 0.050" (1.27mm) radial - 4 leads. The maximum collector emitter breakdown voltage of the product is 30v. Furthermore, it has aphototransistor output. In addition, bulk is the available packaging type of the product. Equipped with reflective sensing mechanism. The product has -40°c ~ 85°c operating temperature range. The maximum DC forward current of the product is 50ma. It features a 0.050" (1.27mm) of sensing distance. Moreover, the product comes in radial - 4 leads. It responds within 10µs, 50µs. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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