Infineon AIM SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1

Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
AIM
Channel Type:
N
Package Type:
PG-TO247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
SiC
Pin Count:
4
RoHs Compliant
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This is AIM SiC N-Channel MOSFET 100 A 1200 V 4-Pin PG-TO247-4 manufactured by Infineon. The manufacturer part number is AIMZH120R020M1TXKSA1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product aim, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-to247-4. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins.

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Datasheet - AIMZH120R020M1TXKSA1(Technical Reference)

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