Infineon AIM SiC N-Channel MOSFET, 34 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R060M1HXTMA1

Infineon

Product Information

Maximum Drain Source Voltage:
750 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
AIM
Channel Type:
N
Package Type:
PG-TO263-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
34 A
Transistor Material:
SiC
Pin Count:
7
RoHs Compliant
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This is AIM SiC N-Channel MOSFET 34 A 750 V 7-Pin PG-TO263-7 manufactured by Infineon. The manufacturer part number is AIMBG75R060M1HXTMA1. It has a maximum of 750 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product aim, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-to263-7. It consists of 1 elements per chip. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins.

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Datasheet - AIMBG75R060M1HXTMA1(Technical Reference)

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