Infineon IMW SiC N-Channel MOSFET, 83 A, 650 V, 4-Pin PG-TO247-3 IMW65R020M2HXKSA1

Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
IMW
Channel Type:
N
Package Type:
PG-TO247-3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
83 A
Transistor Material:
SiC
Pin Count:
4
RoHs Compliant
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This is IMW SiC N-Channel MOSFET 83 A 650 V 4-Pin PG-TO247-3 manufactured by Infineon. The manufacturer part number is IMW65R020M2HXKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product imw, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-to247-3. It consists of 1 elements per chip. While 83 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins.

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Datasheet - IMW65R020M2HXKSA1(Technical Reference)

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