SiC N-Channel MOSFET, 29 A, 1200 V, 3-Pin TO-247AD 3L Vishay MXP120A080FW-GE3

MXP120A080FW-GE3 SiC N-Channel MOSFET, 29 A, 1200 V, 3-Pin TO-247AD 3L Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
MXP120A
Channel Type:
N
Package Type:
TO-247AD 3L
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
29 A
Transistor Material:
SiC
Pin Count:
3
RoHs Compliant
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This is SiC N-Channel MOSFET 29 A 1200 V 3-Pin TO-247AD 3L manufactured by Vishay. The manufacturer part number is MXP120A080FW-GE3. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product mxp120a, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-247ad 3l. It consists of 1 elements per chip. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

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Datasheet - MXP120A080FW-GE3(Technical Reference)

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