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SiC N-Channel MOSFET, 24 A, 650 V, 22-Pin PG-HDSOP-22 Infineon IPDQ65R125CFD7XTMA1

IPDQ65R125CFD7XTMA1 SiC N-Channel MOSFET, 24 A, 650 V, 22-Pin PG-HDSOP-22 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
650V CoolMOS
Channel Type:
N
Package Type:
PG-HDSOP-22
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
24 A
Transistor Material:
SiC
Pin Count:
22
RoHs Compliant
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This is SiC N-Channel MOSFET 24 A 650 V 22-Pin PG-HDSOP-22 manufactured by Infineon. The manufacturer part number is IPDQ65R125CFD7XTMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product 650v coolmos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-hdsop-22. It consists of 1 elements per chip. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 22 pins.

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Datasheet - IPDQ65R125CFD7XTMA1(Technical Reference)

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You can order Infineon brand products with IPDQ65R125CFD7XTMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 24 A, 650 V, 22-Pin PG-HDSOP-22 Infineon IPDQ65R125CFD7XTMA1. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 24 A, 650 V, 22-Pin PG-HDSOP-22 Infineon IPDQ65R125CFD7XTMA1.
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