SiC N-Channel MOSFET, 50 A, 1200 V, 23-Pin AG-EASY1B Infineon DF17MR12W1M1HFB68BPSA1

DF17MR12W1M1HFB68BPSA1 SiC N-Channel MOSFET, 50 A, 1200 V, 23-Pin AG-EASY1B Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
50 A
Channel Mode:
Enhancement
Series:
EasyPACK
Channel Type:
N
Package Type:
AG-EASY1B
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
23
RoHs Compliant
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This is SiC N-Channel MOSFET 50 A 1200 V 23-Pin AG-EASY1B manufactured by Infineon. The manufacturer part number is DF17MR12W1M1HFB68BPSA1. It has a maximum of 1200 v drain source voltage. While 50 a of maximum continuous drain current. The product carries enhancement channel mode. The product easypack, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of ag-easy1b. It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 23 pins.

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Datasheet - DF17MR12W1M1HFB68BPSA1(Technical Reference)

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