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Dual SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF16MR12W1M1HFB67BPSA1

DF16MR12W1M1HFB67BPSA1 Dual SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
25 A
Channel Mode:
Enhancement
Series:
EasyPACK
Channel Type:
N
Package Type:
AG-EASY1B
Number of Elements per Chip:
2
Transistor Material:
SiC
Pin Count:
23
RoHs Compliant
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This is Dual SiC N-Channel MOSFET 25 A 1200 V 23-Pin AG-EASY1B manufactured by Infineon. The manufacturer part number is DF16MR12W1M1HFB67BPSA1. It has a maximum of 1200 v drain source voltage. While 25 a of maximum continuous drain current. The product carries enhancement channel mode. The product easypack, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of ag-easy1b. It consists of 2 elements per chip. The transistor is manufactured from highly durable sic material. It contains 23 pins.

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Datasheet - DF16MR12W1M1HFB67BPSA1(Technical Reference)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET28373693 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET28373693.
You can order Infineon brand products with DF16MR12W1M1HFB67BPSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF16MR12W1M1HFB67BPSA1. You can also check on our website or by contacting our customer support team for further order details on Dual SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF16MR12W1M1HFB67BPSA1.
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