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SiC N-Channel MOSFET, 314 A, 120 V, 8-Pin PG-HSOF-8-1 Infineon IAUTN12S5N017ATMA1

IAUTN12S5N017ATMA1 SiC N-Channel MOSFET, 314 A, 120 V, 8-Pin PG-HSOF-8-1 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
120 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS
Channel Type:
N
Package Type:
PG-HSOF-8-1
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
314 A
Transistor Material:
SiC
Pin Count:
8
RoHs Compliant
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This is SiC N-Channel MOSFET 314 A 120 V 8-Pin PG-HSOF-8-1 manufactured by Infineon. The manufacturer part number is IAUTN12S5N017ATMA1. It has a maximum of 120 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-hsof-8-1. It consists of 1 elements per chip. While 314 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 8 pins.

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Datasheet - IAUTN12S5N017ATMA1(Technical Reference)

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You can order Infineon brand products with IAUTN12S5N017ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 314 A, 120 V, 8-Pin PG-HSOF-8-1 Infineon IAUTN12S5N017ATMA1. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 314 A, 120 V, 8-Pin PG-HSOF-8-1 Infineon IAUTN12S5N017ATMA1.
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