Silicon P-Channel MOSFET, 54 A, 30 V, 8-Pin 1212-8 Vishay SISH103DN-T1-GE3

SISH103DN-T1-GE3 Silicon P-Channel MOSFET, 54 A, 30 V, 8-Pin 1212-8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
P
Package Type:
1212-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
54 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon P-Channel MOSFET 54 A 30 V 8-Pin 1212-8 manufactured by Vishay. The manufacturer part number is SISH103DN-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of 1212-8. It consists of 1 elements per chip. While 54 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - SISH103DN-T1-GE3(Technical Reference)

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