SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCT020W120G3-4AG

SCT020W120G3-4AG SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
SCT
Channel Type:
N
Package Type:
HiP247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
SiC
Pin Count:
4
RoHs Compliant
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This is SiC N-Channel MOSFET 100 A 1200 V 4-Pin HiP247-4 manufactured by STMicroelectronics. The manufacturer part number is SCT020W120G3-4AG. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of hip247-4. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins.

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Datasheet - SCT020W120G3-4AG(Technical Reference)

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