Dual Silicon N-Channel MOSFET, 123 A, 40 V, 4-Pin SO-8L Vishay SQJ740EP-T1_GE3

SQJ740EP-T1_GE3 Dual Silicon N-Channel MOSFET, 123 A, 40 V, 4-Pin SO-8L Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
SO-8L
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
123 A
Transistor Material:
Silicon
Pin Count:
4
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 123 A 40 V 4-Pin SO-8L manufactured by Vishay. The manufacturer part number is SQJ740EP-T1_GE3. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of so-8l. It consists of 2 elements per chip. While 123 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.

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Datasheet - SQJ740EP-T1_GE3(Technical Reference)

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