Dual Silicon N-Channel MOSFET, 36 A, 80 V, 12-Pin 3 x 3FS Vishay SIZF4800LDT-T1-GE3

SIZF4800LDT-T1-GE3 Dual Silicon N-Channel MOSFET, 36 A, 80 V, 12-Pin 3 x 3FS Vishay
SIZF4800LDT-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
3 x 3FS
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
36 A
Transistor Material:
Silicon
Pin Count:
12
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 36 A 80 V 12-Pin 3 x 3FS manufactured by Vishay. The manufacturer part number is SIZF4800LDT-T1-GE3. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of 3 x 3fs. It consists of 2 elements per chip. While 36 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 12 pins.

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Datasheet - SIZF4800LDT-T1-GE3(Technical Reference)

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