Silicon N-Channel MOSFET, 66.6 A, 80 V, 8-Pin 1212-8S Vishay SISS5808DN-T1-GE3

SISS5808DN-T1-GE3 Silicon N-Channel MOSFET, 66.6 A, 80 V, 8-Pin 1212-8S Vishay
SISS5808DN-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
1212-8S
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
66.6 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon N-Channel MOSFET 66.6 A 80 V 8-Pin 1212-8S manufactured by Vishay. The manufacturer part number is SISS5808DN-T1-GE3. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of 1212-8s. It consists of 1 elements per chip. While 66.6 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - SISS5808DN-T1-GE3(Technical Reference)

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