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Silicon P-Channel MOSFET, 36.3 A, 60 V, 8-Pin 1212-8S Vishay SISS5623DN-T1-GE3

SISS5623DN-T1-GE3 Silicon P-Channel MOSFET, 36.3 A, 60 V, 8-Pin 1212-8S Vishay
SISS5623DN-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
P
Package Type:
1212-8S
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
36.3 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon P-Channel MOSFET 36.3 A 60 V 8-Pin 1212-8S manufactured by Vishay. The manufacturer part number is SISS5623DN-T1-GE3. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of 1212-8s. It consists of 1 elements per chip. While 36.3 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - SISS5623DN-T1-GE3(Technical Reference)

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You can order Vishay brand products with SISS5623DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Silicon P-Channel MOSFET, 36.3 A, 60 V, 8-Pin 1212-8S Vishay SISS5623DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Silicon P-Channel MOSFET, 36.3 A, 60 V, 8-Pin 1212-8S Vishay SISS5623DN-T1-GE3.
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