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Dual Silicon N-Channel MOSFET, 66 A, 80 V, 4-Pin PowerPAK SO-8L Vishay SQJ186ELP-T1_GE3

SQJ186ELP-T1_GE3 Dual Silicon N-Channel MOSFET, 66 A, 80 V, 4-Pin PowerPAK SO-8L Vishay
SQJ186ELP-T1_GE3
SQJ186ELP-T1_GE3
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
PCB Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
66 A
Transistor Material:
Silicon
Pin Count:
4
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 66 A 80 V 4-Pin PowerPAK SO-8L manufactured by Vishay. The manufacturer part number is SQJ186ELP-T1_GE3. It has a maximum of 80 v drain source voltage. The product is available in pcb mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak so-8l. It consists of 2 elements per chip. While 66 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.

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Datasheet - SQJ186ELP-T1_GE3(Technical Reference)

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You can order Vishay brand products with SQJ186ELP-T1_GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual Silicon N-Channel MOSFET, 66 A, 80 V, 4-Pin PowerPAK SO-8L Vishay SQJ186ELP-T1_GE3. You can also check on our website or by contacting our customer support team for further order details on Dual Silicon N-Channel MOSFET, 66 A, 80 V, 4-Pin PowerPAK SO-8L Vishay SQJ186ELP-T1_GE3.
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