Dual Silicon N-Channel MOSFET, 8.8 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS112LDN-T1-GE3

SIS112LDN-T1-GE3 Dual Silicon N-Channel MOSFET, 8.8 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay
SIS112LDN-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
8.8 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 8.8 A 100 V 8-Pin PowerPAK 1212-8 manufactured by Vishay. The manufacturer part number is SIS112LDN-T1-GE3. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak 1212-8. It consists of 2 elements per chip. While 8.8 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - SIS112LDN-T1-GE3(Technical Reference)

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