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Dual Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH085N60EF-T1GE3

SIHH085N60EF-T1GE3 Dual Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay
SIHH085N60EF-T1GE3
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PowerPAK 8 x 8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
30 A
Transistor Material:
Silicon
Pin Count:
4
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 30 A 650 V 4-Pin PowerPAK 8 x 8 manufactured by Vishay. The manufacturer part number is SIHH085N60EF-T1GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak 8 x 8. It consists of 2 elements per chip. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.

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Datasheet - SIHH085N60EF-T1GE3(Technical Reference)

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FAQs

Yes. You can also search SIHH085N60EF-T1GE3 on website for other similar products.
We accept all major payment methods for all products including ET26056158. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIHH085N60EF-T1GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH085N60EF-T1GE3. You can also check on our website or by contacting our customer support team for further order details on Dual Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH085N60EF-T1GE3.
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