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Quad Silicon N-Channel MOSFET, 5 A, 850 V, 3-Pin D2PAK Vishay SIHB6N80AE-GE3

SIHB6N80AE-GE3 Quad Silicon N-Channel MOSFET, 5 A, 850 V, 3-Pin D2PAK Vishay
SIHB6N80AE-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
850 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
TO-263
Number of Elements per Chip:
4
Maximum Continuous Drain Current:
5 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Quad Silicon N-Channel MOSFET 5 A 850 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB6N80AE-GE3. It has a maximum of 850 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-263. It consists of 4 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - SIHB6N80AE-GE3(Technical Reference)

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We accept all major payment methods for all products including ET26056155. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIHB6N80AE-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Quad Silicon N-Channel MOSFET, 5 A, 850 V, 3-Pin D2PAK Vishay SIHB6N80AE-GE3. You can also check on our website or by contacting our customer support team for further order details on Quad Silicon N-Channel MOSFET, 5 A, 850 V, 3-Pin D2PAK Vishay SIHB6N80AE-GE3.
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