Dual Silicon N-Channel MOSFET, 9 A, 650 V, 8-Pin PowerPAK SO-8DC Vishay SIHA150N60E-GE3

SIHA150N60E-GE3 Dual Silicon N-Channel MOSFET, 9 A, 650 V, 8-Pin PowerPAK SO-8DC Vishay
SIHA150N60E-GE3
SIHA150N60E-GE3
ET26056152
ET26056152
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PowerPAK SO-8DC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
9 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 9 A 650 V 8-Pin PowerPAK SO-8DC manufactured by Vishay. The manufacturer part number is SIHA150N60E-GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak so-8dc. It consists of 2 elements per chip. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - SIHA150N60E-GE3(Technical Reference)

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