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N-Channel MOSFET, 39.6 A, 200 V, 8-Pin PowerPAK SO-8DC Vishay SIDR610EP-T1-RE3

SIDR610EP-T1-RE3 N-Channel MOSFET, 39.6 A, 200 V, 8-Pin PowerPAK SO-8DC Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
200 V
Maximum Continuous Drain Current:
39.6 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
PowerPAK SO-8DC
Pin Count:
8
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 39.6 A 200 V 8-Pin PowerPAK SO-8DC manufactured by Vishay. The manufacturer part number is SIDR610EP-T1-RE3. It has a maximum of 200 v drain source voltage. While 39.6 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of powerpak so-8dc. It contains 8 pins.

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Datasheet - SIDR610EP-T1-RE3(Technical Reference)

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FAQs

Yes. You can also search SIDR610EP-T1-RE3 on website for other similar products.
We accept all major payment methods for all products including ET24148159. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIDR610EP-T1-RE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 39.6 A, 200 V, 8-Pin PowerPAK SO-8DC Vishay SIDR610EP-T1-RE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 39.6 A, 200 V, 8-Pin PowerPAK SO-8DC Vishay SIDR610EP-T1-RE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24148159 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24148159.
Yes. We ship SIDR610EP-T1-RE3 Internationally to many countries around the world.
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