N-Channel MOSFET, 28 A, 650 V, 7-Pin D2PAK Infineon IMBG65R083M1HXTMA1

IMBG65R083M1HXTMA1 N-Channel MOSFET, 28 A, 650 V, 7-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
28 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
TO-263-7
Number of Elements per Chip:
1
Pin Count:
7
RoHs Compliant
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This is N-Channel MOSFET 28 A 650 V 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IMBG65R083M1HXTMA1. It has a maximum of 650 v drain source voltage. While 28 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of to-263-7. It consists of 1 elements per chip. It contains 7 pins.

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Datasheet - IMBG65R083M1HXTMA1(Technical Reference)

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