N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK Infineon IPD65R225C7ATMA1

IPD65R225C7ATMA1 N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
11 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
TO-252
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 11 A 650 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD65R225C7ATMA1. It has a maximum of 650 v drain source voltage. While 11 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of to-252. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPD65R225C7ATMA1(Technical Reference)

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