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N-Channel MOSFET, 58.1 A, 80 V PowerPAK 1212-8S Vishay SiSS588DN-T1-GE3

SiSS588DN-T1-GE3 N-Channel MOSFET, 58.1 A, 80 V PowerPAK 1212-8S Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
58.1 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
PowerPAK 1212-8S
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 58.1 A 80 V PowerPAK 1212-8S manufactured by Vishay. The manufacturer part number is SiSS588DN-T1-GE3. It has a maximum of 80 v drain source voltage. While 58.1 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. It contains 8 pins.

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Datasheet - SiSS588DN-T1-GE3(Technical Reference)

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Yes. You can also search SiSS588DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET23139731. Please check your shopping cart at the time of order.
You can order Vishay brand products with SiSS588DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 58.1 A, 80 V PowerPAK 1212-8S Vishay SiSS588DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 58.1 A, 80 V PowerPAK 1212-8S Vishay SiSS588DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23139731 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23139731.
Yes. We ship SiSS588DN-T1-GE3 Internationally to many countries around the world.
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