N-Channel MOSFET, 6 A, 800 V, 3-Pin Thin-Lead TO-220 FULLPAK Vishay SIHA15N80AE-GE3

SIHA15N80AE-GE3 N-Channel MOSFET, 6 A, 800 V, 3-Pin Thin-Lead TO-220 FULLPAK Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
6 A
Mounting Type:
Through Hole
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
2 → 4V
Maximum Drain Source Resistance:
0.304 Ω
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 6 A 800 V 3-Pin Thin-Lead TO-220 FULLPAK manufactured by Vishay. The manufacturer part number is SIHA15N80AE-GE3. It has a maximum of 800 v drain source voltage. While 6 a of maximum continuous drain current. The product is available in through hole configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 0.304 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - SIHA15N80AE(Technical Reference)

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