N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23 Infineon BSS126IXTSA1

BSS126IXTSA1 N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Series:
SIPMOS®
Channel Type:
N
Maximum Gate Threshold Voltage:
1.6V
Maximum Drain Source Resistance:
700 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
21 mA
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 21 mA 600 V Depletion 3-Pin PG-SOT23 manufactured by Infineon. The manufacturer part number is BSS126IXTSA1. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. The product sipmos®, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.6v of maximum gate threshold voltage. It provides up to 700 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. While 21 ma of maximum continuous drain current. It contains 3 pins.

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Datasheet - BSS126IXTSA1(Technical Reference)

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