N-Channel MOSFET, 19 A, 700 V, 3-Pin D2PAK Infineon IPB65R125CFD7ATMA1

IPB65R125CFD7ATMA1 N-Channel MOSFET, 19 A, 700 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
700 V
Maximum Continuous Drain Current:
19 A
Mounting Type:
Surface Mount
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.125 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 19 A 700 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R125CFD7ATMA1. It has a maximum of 700 v drain source voltage. While 19 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.125 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPB65R125CFD7ATMA1(Technical Reference)

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