SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO247-4L ON Semiconductor NTH4L022N120M3S

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
68 A
Mounting Type:
Through Hole
Transistor Material:
SiC
Maximum Gate Threshold Voltage:
4.4V
Maximum Drain Source Resistance:
0.03 Ω
Package Type:
TO247-4L
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
4
RoHs Compliant
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This is SiC N-Channel MOSFET 68 A 1200 V 4-Pin TO247-4L manufactured by ON Semiconductor. The manufacturer part number is NTH4L022N120M3S. It has a maximum of 1200 v drain source voltage. While 68 a of maximum continuous drain current. The product is available in through hole configuration. The transistor is manufactured from highly durable sic material. The product carries 4.4v of maximum gate threshold voltage. It provides up to 0.03 ω maximum drain source resistance. The package is a sort of to247-4l. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 4 pins.

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Datasheet - NTH4L022N120M3S(Technical Reference)

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