SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin PG-TO247-3-41 Infineon AIMW120R080M1XKSA1

AIMW120R080M1XKSA1 SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin PG-TO247-3-41 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.08 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
34 A
Transistor Material:
SiC
Pin Count:
3
RoHs Compliant
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This is SiC N-Channel MOSFET 34 A 1200 V 3-Pin PG-TO247-3-41 manufactured by Infineon. The manufacturer part number is AIMW120R080M1XKSA1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.08 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

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Datasheet - AIMW120R080M1XKSA1(Technical Reference)

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