Name: AIMW120R080M1XKSA1, Infineon
Brand: Infineon
SKU: ET22792768
Price: 8.32 GBP
Availability: InStock

AIMW120R080M1XKSA1 SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin PG-TO247-3-41 Infineon

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Product Information

Maximum Drain Source Voltage:

1200 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Series:

CoolSiC

Channel Type:

Maximum Gate Threshold Voltage:

4.5V

Maximum Drain Source Resistance:

0.08 Ω

Package Type:

TO-247

Number of Elements per Chip:

Maximum Continuous Drain Current:

34 A

Transistor Material:

SiC

Pin Count:

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This is SiC N-Channel MOSFET 34 A 1200 V 3-Pin PG-TO247-3-41 manufactured by Infineon. The manufacturer part number is AIMW120R080M1XKSA1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.08 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

Datasheet - AIMW120R080M1XKSA1(Technical Reference)

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You can order Infineon brand products with AIMW120R080M1XKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin PG-TO247-3-41 Infineon AIMW120R080M1XKSA1. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin PG-TO247-3-41 Infineon AIMW120R080M1XKSA1.

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SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin PG-TO247-3-41 Infineon AIMW120R080M1XKSA1

AIMW120R080M1XKSA1

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