Silicon N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-3P Renesas 2SK1835-E

2SK1835-E Silicon N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-3P Renesas
Renesas Electronics

Product Information

Maximum Drain Source Voltage:
1500 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Maximum Drain Source Resistance:
4.6 Ω
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Silicon N-Channel MOSFET 4 A 1500 V 3-Pin TO-3P Renesas manufactured by Renesas Electronics. The manufacturer part number is 2SK1835-E. It has a maximum of 1500 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. It provides up to 4.6 ω maximum drain source resistance. The package is a sort of to-3pn. It consists of 1 elements per chip. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - 2SK1835-E(Technical Reference)

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