SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N ROHM SCT2280KEGC11

SCT2280KEGC11 SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N ROHM
ROHM

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.28 Ω
Package Type:
TO-247N
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
14 A
Transistor Material:
SiC
Pin Count:
3
RoHs Compliant
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This is SiC N-Channel MOSFET 14 A 1200 V 3-Pin TO-247N manufactured by ROHM. The manufacturer part number is SCT2280KEGC11. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.28 ω maximum drain source resistance. The package is a sort of to-247n. It consists of 1 elements per chip. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

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Datasheet - SCT2280KEGC11(Technical Reference)

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You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N ROHM SCT2280KEGC11. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N ROHM SCT2280KEGC11.
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